Electronic Devices and Subsystems
Cardiff Research Areas » Engineering and Physical Sciences » Information and communication technologies
Subordinate Areas
- Bipolar Junction Transistor
- CMOS Devices
- Device Feature Size
- Device Modelling and Simulation
- Device Processing
- Dynamic Random Access Memory
- Electromigration
- Electron Mobility
- Energy Harvesting Devices
- Field Effect Transistor
- Field Programmable Gate Array
- Gunn Diodes
- Heterojunction Bipolar Trans
- High Electron Mobility Trans
- II-VI Semiconductors
- III-V Arsenides
- III-V Circuits
- III-V Nitrides
- III-V Semiconductors
- Insulated Gate Bipolar Trans
- Interconnects
- MEMS Devices
- Microwave Devices
- Millimetre Wave devices
- MOSFET Devices
- Organic Electronics
- Oscillators
- Power Electronics
- Receivers
- RF & Microwave Devices
- Schottky Diodes
- Silicide
- Silicon Carbide Devices
- Silicon Germanium
- Silicon Micromachinery
- Silicon Semiconductors
- Silicon Technology
- Silicon-on-Insulator (SOI)
- Single Electron Transistors
- Static Random Access Memory
- Terahertz Devices
- Thin Film Transistors
- Transducers
- Wafer Bonding