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Ewch i'r Cynnwys
Ewch i'r Troednodyn
Mewngofnodi
Hygyrchedd
Saesneg (GB)
Hafan Prifysgol Caerdydd
Cymorth defnyddio'r Porth Ymchwil (staff y Brifysgol a myfyrwyr ôl-raddedig ymchwil)
Rhestr o feysydd
»
Electronic Devices and Subsystems
Hafan
Prosiectau
Setiau Data Ymchwil
Electronic Devices and Subsystems
Meysydd Ymchwil Caerdydd
»
Gwyddorau Ffisegol a Pheirianneg
»
Information and communication technologies
Is-feysydd
Bipolar Junction Transistor
CMOS Devices
Device Feature Size
Device Modelling and Simulation
Device Processing
Dynamic Random Access Memory
Electromigration
Electron Mobility
Energy Harvesting Devices
Field Effect Transistor
Field Programmable Gate Array
Gunn Diodes
Heterojunction Bipolar Trans
High Electron Mobility Trans
II-VI Semiconductors
III-V Arsenides
III-V Circuits
III-V Nitrides
III-V Semiconductors
Insulated Gate Bipolar Trans
Interconnects
MEMS Devices
Microwave Devices
Millimetre Wave devices
MOSFET Devices
Organic Electronics
Oscillators
Power Electronics
Receivers
RF & Microwave Devices
Schottky Diodes
Silicide
Silicon Carbide Devices
Silicon Germanium
Silicon Micromachinery
Silicon Semiconductors
Silicon Technology
Silicon-on-Insulator (SOI)
Single Electron Transistors
Static Random Access Memory
Terahertz Devices
Thin Film Transistors
Transducers
Wafer Bonding
Rhannu dolen
Diweddarwyd y tro diwethaf ar 2015-10-11 am 12:52