Is-feysydd

• Resonant Tunnelling in GaAs/AlGaAs Triple Barrier Heterostructures (01.10.2012 - 30.09.2016)
• Photonic integrated modulators for aerospace and data/telecom (01.01.2024 - 31.12.2026)
• Efficient integrated photonic phase shifters for data/telecom and quantum applications (01.03.2024 - 28.02.2026)

1 o 3

• Anomalous large oscillation of effective g-factor in an InSb QW 2DEG - Smith GV, Buckle PD, Hayes DG, et al. (2017). Cardiff University. 10.17035/d.2016.0030873695. III-V Semiconductors
• Coverage and Fluctuations Data for: 'Unified method for measuring entropy differences between coexisting surface phases using Low energy electron microscopy' - Ivanov M, Gomez D, Niu Y (2022). Cardiff University. 10.17035/d.2022.0216365941. III-V Semiconductors Surface Phase Separation
• Determination of the transport lifetime limiting scattering rate in InSb / AlxIn1-x Sb quantum wells using optical surface microscopy - McIndo CJ, Hayes DG, Papageorgiou A, et al. (2017). Cardiff University. 10.17035/d.2017.0031836175. III-V Semiconductors Semiconductors - Transport Semiconductor Structure/Growth
• Extraction of electron quantum lifetimes at low magnetic field in an InSb/Ai(1-x)InxSb quantum well 2DEGs - Hayes D, Buckle PD, Allford CP, et al. (2016). Cardiff University. 10.17035/d.2016.0008719302. III-V Semiconductors
• Faraday-cage-assisted etching of suspended gallium nitride nanostructures - data - Sobiesierski A, Shabbir S, Thomas S, et al. (2020). Cardiff University. 10.17035/d.2020.0108194561. III-V Semiconductors