Ewch i'r Pennawd Ewch i'r Dudalen Lywio Ewch i'r Cynnwys Ewch i'r Troednodyn
 Mewngofnodi  Hygyrchedd  Saesneg (GB) 
Hafan
Hafan Prifysgol CaerdyddCymorth defnyddio'r Porth Ymchwil (staff y Brifysgol a myfyrwyr ôl-raddedig ymchwil)
Rhestr o feysydd » Semiconductors - Transport
Hafan
Prosiectau
Setiau Data Ymchwil

Semiconductors - Transport

Meysydd Ymchwil Caerdydd»Gwyddorau Ffisegol a Pheirianneg»Materials sciences»Materials Synthesis and Growth

Is-feysydd

Prosiectau
Resonant Tunnelling in GaAs/AlGaAs Triple Barrier Heterostructures (01.10.2012 - 30.09.2016)

Setiau Data Cysylltiedig
Determination of the transport lifetime limiting scattering rate in InSb / AlxIn1-x Sb quantum wells using optical surface microscopy - McIndo CJ, Hayes DG, Papageorgiou A, et al. (2017). Cardiff University. 10.17035/d.2017.0031836175. III-V Semiconductors Semiconductors - Transport Semiconductor Structure/Growth
Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells - McIndo CJ, Hayes DG, Papageorgiou A, et al. (2018). Cardiff University. 10.17035/d.2017.0040827720. Semiconductor Structure/Growth III-V Semiconductors Semiconductors - Transport
Thermally Activated Resonant Tunnelling in GaAs/AlGaAs Triple Barrier Heterostructures - Allford CP, Buckle PD (2015). Cardiff University. 10.17035/d.2015.100109. III-V Semiconductors Semiconductors - Transport

Rhannu dolen
Diweddarwyd y tro diwethaf ar 2015-10-11 am 12:56

Thomson Reuters Deutschland GmbH
Zur Giesserei 2
D-76227 Karlsruhe | Germany
thomsonreuters.com
www.converis5.com