Title: Faraday-cage-assisted etching of suspended gallium nitride nanostructures - data

Citation
Sobiesierski A, Shabbir S, Thomas S, et al. (2020). Faraday-cage-assisted etching of suspended gallium nitride nanostructures - data. Cardiff University. http://doi.org/10.17035/d.2020.0108194561


Access Rights: Data is provided under a Creative Commons Attribution (CC BY 4.0) licence
Access Method: Click to email a request for this data to opendata@cardiff.ac.uk

Dataset Details
Publisher: Cardiff University
Date (year) of data becoming publicly available: 2020
Coverage start date: 01/01/2019
Coverage end date: 01/01/2020
Data format: pptx
Software Required: ppt
Estimated total storage size of dataset: Less than 100 megabytes
Geographical Description: Cardiff
DOI: 10.17035/d.2020.0108194561

Description

1. (a) Schematic of the cross section of the etch chamber containing the Faraday cage, with the GaN samples at its center, (b) schematic showing how ions directed at steep angles θ cause the characteristic undercut profile, (c) the plot of the predicted etch angles ϕ and θ, (d) a photograph of the triangular Faraday cage with a UK ten-pence coin for scale (diameter 24.5 mm), and (e) a scanning electron micrograph of a cleaved edge of a GaN waveguide sample etched in the cage to a depth 2d = 1.56 μm.

2. (a) Stripe etched without the cage, showing an etch angle of −15○, typical of ICP etched GaN, (b) an etch with the sample in a 45○ cage and with the same 1:1 Cl2:Ar gas mix, leading to a −22○ etch, and (c) an etch in a 45○ cage with a 5:1 Cl2:Ar mix to give a θ = 0○ etch profile.

3. (a) Free-standing singly clamped triangular cantilever 1 μm in width and 35 μm in length, suspended 2 μm above a planar layer, etched inside a Faraday cage with an equilateral triangular cross section and (b) a suspended doubly-clamped cantilever of 2 μm width.

4. Calculations of waveguides with an equilateral triangular cross-section: (a) the effective index of the waveguide modes (blue: TE and red: TM) as a function of the waveguide size (inset: the schematic of the calculation) and [(b) and (c)] the mode profiles for (b) the fundamental transverse electric mode and (c) the transverse magnetic mode. Addition profiles provide further information on the electric field.

Numerical values for construction of Figure 4(a) are provided.

Research results based upon these data are published at https://doi.org/10.1063/5.0007947



Keywords

Semiconductors

Research Areas

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Last updated on 2020-07-07 at 15:08

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