Teitl:    Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD: data

Dyfyniad
Brown R, Ratiu B-P, Liang B, et al.  (2022). Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD: data. Cardiff University. https://doi.org/10.17035/d.2022.0218959420

Manylion y Set Ddata

Cyhoeddwr: Cardiff University

Dyddiad (y flwyddyn) pryd y daeth y data ar gael i'r cyhoedd: 2022

Fformat y data: .X01, .xlsx

Meddalwedd ofynnol: X'Pert Epitaxy is recomended to veiw the XRD data

DOI : 10.17035/d.2022.0218959420

DOI URL: http://doi.org/10.17035/d.2022.0218959420

Disgrifiad

In order to quantify and verify the quality of the growth of the Type-II superlattice X-ray diffraction (XRD) was used.  The peaks in the XRD data correspond to different atomic spacings within the structure. From this it is possible to quantify exactly what was grown in terms of both composition and layer thickness. The XRD data is in .X01 format and can be opened with the open source X'Pert Epitaxy to view the peaks. Fourier transform infrared spectroscopy was used to characterise the photoluminescence (PL) performance of the T2SL from 77 K to 300 K as shown in Fig. 5a. A 671 nm Diode-Pumped Solid State (DPSS) laser was used to pump the sample to acquire PL. The PL data is presented as an .xlsx file with the first column corresponding to the wavelength and each column after that corresponding to a different temperature. The width of the peaks is a good indicator to the quality of the sample.

Research results based upon these data are pubilshed at https://doi.org/10.1016/j.jcrysgro.2022.126860