Title: Determination of the transport lifetime limiting scattering rate in InSb / AlxIn1-x Sb quantum wells using optical surface microscopy

Citation
McIndo CJ, Hayes DG, Papageorgiou A, et al. (2017). Determination of the transport lifetime limiting scattering rate in InSb / AlxIn1-x Sb quantum wells using optical surface microscopy. Cardiff University. http://doi.org/10.17035/d.2017.0031836175


This data is not currently available because: Intent to publish project results
Access Method: Click to email a request for this data to opendata@cardiff.ac.uk

Dataset Details
Publisher: Cardiff University
Date (year) of data becoming publicly available: 2017
Data format: .jpg, .txt
Software Required: No
Estimated total storage size of dataset: Less than 100 megabytes
Number of Files In Dataset: 7
DOI: 10.17035/d.2017.0031836175

Description

Differential interference contrast DIC (Nomarski) imaging has been performed on various InSb QW 2DEG materials at an optical magnification of ×50.Image analysis techniques were employed to extract the average number of features and corresponding feature size for each sample. Data for this is presented in a tab separated .txt file, with data columns corresponding to the sample wafer name, mobility (in [cm^2/Vs]) measured using standard Hall techniques over a range in temperature from 2.8K to 300K, and over a range of magnetic field from -0.6T to 0.6T, average feature diameter (in [um]) and associated error (in [um]). For comparison, also presented are two files containing Hall measured mobility and mean free path (calculated from a simple Drude model). One file contains results from samples measured in this study, whilst the other contains data from historical samples. Files are tab separated .txt files with columns corresponding to mobility (in [cm^2/Vs]) and mean free path (in [um]).

Files containing the measured mobility and 2D carrier density from the standard Hall measurements described above are presented in two files. One file contains data for a single growth batch, broadly defining 3 regimes in the mobility vs carrier density, firstly increasing, then plateauing and finally decreasing. The other file contains Hall data for other growth batches. Files are tab separated .txt files with columns corresponding to carrier concentration (n2D) (in [m^-3]) and mobility (in [m^2/Vs]).

A transport lifetime model has been employed to match predicted mobility given measured carrier density to the measured mobility. Standard scattering terms have been implemented, including a non-parabolic effective mass, and a modified remote ionised impurity scattering term to account for a spread of dopant as opposed to a single dopant plain. Also included is a scattering term related to the surface features observed through Nomarski imaging. Files are tab separated .txt files with columns corresponding to: Temperature[K], Remote Ionised Impurity Mobility[cm^2/Vs], Background Impurity[cm^2/Vs], Interface Roughness[cm^2/Vs], Acoustic Phonon[cm^2/Vs], Optical Phonon[cm^2/Vs], Surface Feature[cm^2/Vs] and Total Mobility[cm^2/Vs].

Research results based upon these data are published at https://doi.org/10.1016/j.physe.2017.04.019


Keywords

Electron Transport, Surface science

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Last updated on 2019-16-09 at 14:04

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