Title: Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells


Citation
McIndo CJ, Hayes DG, Papageorgiou A, et al. (2018). Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells. Cardiff University. https://doi.org/10.17035/d.2017.0040827720



Access Rights: Creative Commons Attribution 4.0 International

Access Method: Click to email a request for this data to opendata@cardiff.ac.uk


Dataset Details

Publisher: Cardiff University

Date (year) of data becoming publicly available: 2018

Coverage start date: 01/10/2016

Coverage end date: 31/08/2017

Data format: .TXT

Software Required: Excel, Notepad etc.

Estimated total storage size of dataset: Less than 100 megabytes

Number of Files In Dataset: 7

DOI : 10.17035/d.2017.0040827720

DOI URL: http://doi.org/10.17035/d.2017.0040827720


Description

Differential interference contrast DIC (Nomarski) imaging has been performed on various InSb QW 2DEG materials at an optical magnification of ×50. Image analysis techniques were employed to extract the average number of features and corresponding feature size for each sample. Data for this is presented in a tab separated .txt file, with data columns corresponding to the experimentally measured sample mobility (in [cm^2/Vs]) and corresponding Drude mean free path (in [um]), measured using standard Hall techniques at 3K, and over a range of magnetic field from -0.6T to 0.6T, average feature diameter (in [um]) and associated error (in [um]).

Files containing the measured mobility and 2D carrier density from the standard Hall measurements described above are presented in two files. One file contains data for a single growth batch, broadly defining 3 regimes in the mobility vs carrier density, firstly increasing, then plateauing and finally decreasing. The other file contains Hall data for other growth batches. Files are tab separated .txt files with columns corresponding to carrier concentration (n2D) (in [m^-3]) and mobility (in [m^2/Vs]).

A transport lifetime model has been employed to match predicted mobility given measured carrier density to the measured mobility. Standard scattering terms have been implemented, including a non-parabolic effective mass, and a modified remote ionised impurity scattering term to account for a spread of dopant as opposed to a single dopant plain. Also included is a scattering term related to the surface features observed through Nomarski imaging. Files are tab separated .txt files with columns corresponding to: Temperature[K], Remote Ionised Impurity Mobility[cm^2/Vs], Background Impurity[cm^2/Vs], Interface Roughness[cm^2/Vs], Acoustic Phonon[cm^2/Vs], Optical Phonon[cm^2/Vs], Surface Feature[cm^2/Vs] and Total Mobility[cm^2/Vs]. Also included is a tab separated .txt file containing experimentally measured mobility [cm^2/Vs] as a function of temperature [K].

A Monte-Carlo simulation has been used combining Landauer-Buttiker theory and a Drude model to simulate mobilities and currents due to potential barriers at surface feature boundaries. The resultant mobility for barriers of 1 to 50 monolayers (MLs) is presented in a tab separated file, where the first column corresponds to temperature [K] and the remaining columns are the mobility (in [cm^2/Vs]) for barrier thicknesses (in [ML]), with the header giving the specific barrier width. Also included is a tab separated file .txt containing data for barrier transmission as a function of energy, T(E), for barriers from 1 to 50 ML, and fermi distributions, f(E), as a function of energy for 3K and 300K. The first column corresponds to temperature [K], the next columns give T(E) for the barrier thickness given in the header and the final columns give f(E) for the thicknesses given in the header.

Research results based upon these data are published at http://doi.org/10.1088/1742-6596/964/1/012005


Keywords

Semiconductors

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Last updated on 2022-13-05 at 09:08