Teitl: Superconducting diamond on silicon nitride for device applications

Dyfyniad
Bland HA, Thomas ELH, Klemencic GM, et al. (2018). Superconducting diamond on silicon nitride for device applications. Cardiff University. http://doi.org/10.17035/d.2018.0055370965


Nid yw'r data hwn ar gael ar hyn o bryd oherwydd: Bwriad i gyhoeddi canlyniadau prosiect
Dull Mynediad: I anfon cais i gael y data hwn, ebostiwch opendata@caerdydd.ac.uk

Manylion y Set Ddata
Cyhoeddwr: Cardiff University
Dyddiad (y flwyddyn) pryd y daeth y data ar gael i'r cyhoedd: 2018
Math o ddata: ,
Fformat y data: .tif, .txt, .xlsx, .vms, .dat
Meddalwedd ofynnol: CasaXPS
Amcangyfrif o gyfanswm maint storio'r set ddata: Llai nag 1 gigabeit
Nifer y ffeiliau yn y set ddata: 16
DOI: 10.17035/d.2018.0055370965

Disgrifiad

The surface of silicon nitride is characterised under XPS and zeta potential measurements following three different surface treatments. XPS data requires the CasaXPS software in order to view the .vms file. Once opened, dataset '1' corresponds to oxygen plasma treated silicon nitride, dataset '3' corresponds to RCA-1 treated silicon nitride, and dataset '4' corresponds to solvent treated silicon nitride. Zeta potential data is arranged in three folders corresponding to data taken following the three different treatments of the silicon nitride surface. For each surface treatment, zeta potential measurements were taken in two runs, one examining the zeta potential under acidic conditions, and one examining the zeta potential under basic conditions. The two .xlsx files are marked as such. Data is found under the 'table' tab. A column for zeta potential (mV) and a corresponding column for pH are shown. The SurPASS 3 electrokinetic analyser was used to take the measurements.

Boron-doped diamond is grown on each treated surface of silicon nitride, and characterised under scanning electron microscopy. A Raith e-line operating at 20 kV and a 10 mm working distance was used to capture images of the films. A folder labelled 'SEM' contains the .tif files containing the images taken, with names corresponding to the surface treatment employed prior to diamond growth. Raman spectroscopy of the diamond films was conducted using the inVia Renishaw confocal microscope equipped with a 514 nm laser. Data is organised into three .txt files corresponding to results from diamond grown following one of three surface treatments. Each file contains two columns, the first corresponds to the Raman shift (cm-1) and the second corresponds to the intensity (a.u.) of the Raman shift. Finally, a Quantum Design physical property measurement system was used to measure each sample's resistance as a function of temperature. Samples were measured in the range 1.9 - 300 K and 1.9 - 7 K.  Wire contacts attached to each sample surface in a van Der Pauw configuration. The data is stored in .dat files, and can be opened through 'TextEdit' or similar programs. A column for temperature and four columns for 'bridge resistivity' are displayed. For the solvent treated and plasma treated sample files, 'bridge 1 resistivity (Ohm)' corresponds to the solvent treated sample and 'bridge 3 resistivity (Ohm)' corresponds to the plasma treated sample. For the RCA-1 treated sample file, 'bridge 2 resistivity (Ohm)' corresponds to the RCA-1 treated sample. 


Meysydd Ymchwil

Prosiectau Cysylltiedig
GaN on diamond (01.12.2016 - 31.12.2021)

Diweddarwyd y tro diwethaf ar 2018-18-09 am 14:24