Teitl: Thick adherent diamond films on AlN with low thermal barrier resistance - data

Mandal S, Yuan C, Massabuau F, et al. (2019). Thick adherent diamond films on AlN with low thermal barrier resistance - data. Cardiff University. http://doi.org/10.17035/d.2019.0079285250

Hawliau Mynediad: Darperir Data dan drwydded Creative Commons Attribution (CC BY 4.0)
Dull Mynediad: I anfon cais i gael y data hwn, ebostiwch opendata@caerdydd.ac.uk

Manylion y Set Ddata
Cyhoeddwr: Cardiff University
Dyddiad (y flwyddyn) pryd y daeth y data ar gael i'r cyhoedd: 2019
Fformat y data: .dat, .spm, .vms, .txt
Meddalwedd ofynnol: .dat and .txt use excel, .spm use Gwyddion, .vms use casaxps
Amcangyfrif o gyfanswm maint storio'r set ddata: Llai nag 1 gigabeit
Nifer y ffeiliau yn y set ddata: 21
DOI: 10.17035/d.2019.0079285250


This dataset is the study of thick adherent diamond layers on AlN. The txt files can be opened and analysed using any plotting software. The work describes growth of >100μm thick diamond layer adherent on aluminium nitride. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plasma treated AlN films retained the thick diamond layers. Clear differences in zeta potential measurement confirms the surface modification due to hydrogen/nitrogen plasma treatment. Areal Raman maps showed an increase in non-diamond carbon in the initial layers of diamond grown on pre-treated AlN. The presence of non- diamond carbon has minimal effect on the interface between diamond and AlN. The surfaces studied with x-ray photoelectron spectroscopy (XPS) revealed a clear distinction between pre-treated and untreated samples. The surface aluminium goes from nitrogen rich environment to an oxygen rich environment after pre-treatment. Cross section transmission electron microscopy shows a clean interface between diamond and AlN. Thermal barrier resistance between diamond and AlN was found to be in the range of 16 m$^2$K/GW which is a large improvement on the current state-of-the-art.  

AlNasrecvd.dat AlNH2.dat AlNH2N2.dat AlNo2.dat is the raw data for zeta potential measurments. These files can be analysed using any plotting software. The data is for asreceived, H2 treated, H2N2 treated and O2 ashed films repectively.

aln 190228.vms aln Aln_p190228b_h2.vms AlN_p190228_h2n2.vms 190228ox.vms is the raw data for xps measurments andthey can be analysed by using CasaXPS. The data is for asreceived, H2 treated, H2N2 treated and O2 ashed films repectively.

10min.0_00001_unseeded.spm 10min+Seeded.0_00001_Htreatedseeds.spm AlN_seeded_N2-10min.0_00000_oterminatedseeds.spm AlN_seeded.0_00000_oterminatedseeds.spm Untreated.0_00001_unseeded.spm Untreated+Seeded.0_00001_htreatedseeds.spm are the AFM data presente din the paper. There are two sets of data one for untreated sample another for pretretaed sample. 10min.0_00001_unseeded.spm 10min+Seeded.0_00001_Htreatedseeds.spm AlN_seeded_N2-10min.0_00000_oterminatedseeds.spm are for pretreted samples with no seeds, hterminated seeds and o terminated seeds respectively. AlN_seeded.0_00000_oterminatedseeds.spm Untreated.0_00001_unseeded.spm Untreated+Seeded.0_00001_htreatedseeds.spm are for untretaed samples with O terminated seeds, unseeded and H terminated seeds respectively.

ramanthick.dat p190507b-400-1600_untreated.txt p190507b-1230-2300_untreated.txt p190507c-400-1600_pretreated.txt p190507c-1230-2300_pretreated.txt are the data for Raman spectroscopy. ramanthick .dat is the data for thick diamond films. Rest are the data for thin diamond films.

profile.dat EELSdata.dat are the rawa data for EELS and element analysis.

Reserach results based upon these data are published at https://doi.org/10.1021/acsami.9b13869

Meysydd Ymchwil

Prosiectau Cysylltiedig
GaN on diamond (01.12.2016 - 31.12.2021)

Diweddarwyd y tro diwethaf ar 2020-23-11 am 10:23