Dr Philip Buckle
Projects as PI
- InSb quantum devices: All-electrically controlled electron spins (ACES) (01/03/2014 - 29/09/2017)
- Nanodiamond electronic devices (01/10/2011 - 30/09/2012)
- Pathways (01/11/2011 - 30/06/2012)
Projects as Co-Investigator
2 of 2
- Integrated III-V haemocytometer (01/12/2013 - 30/09/2017)
- Resonant Tunnelling in GaAs/AlGaAs Triple Barrier Heterostructures (01/10/2012 - 30/09/2016)
Research Datasets
1 of 2
- Anomalous large oscillation of effective g-factor in an InSb QW 2DEG - Smith GV, Buckle PD, Hayes DG, et al. (2017). Cardiff University. 10.17035/d.2016.0030873695. III-V Semiconductors
- Determination of the transport lifetime limiting scattering rate in InSb / AlxIn1-x Sb quantum wells using optical surface microscopy - McIndo CJ, Hayes DG, Papageorgiou A, et al. (2017). Cardiff University. 10.17035/d.2017.0031836175. III-V Semiconductors Semiconductors - Transport Semiconductor Structure/Growth
- Extraction of electron quantum lifetimes at low magnetic field in an InSb/Ai(1-x)InxSb quantum well 2DEGs - Hayes D, Buckle PD, Allford CP, et al. (2016). Cardiff University. 10.17035/d.2016.0008719302. III-V Semiconductors
- Optical Microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells - McIndo CJ, Hayes DG, Papageorgiou A, et al. (2018). Cardiff University. 10.17035/d.2017.0040827720. Semiconductor Structure/Growth III-V Semiconductors Semiconductors - Transport
- Strain Compensated Triple Barrier Resonant Tunnelling Structures for THz Applications - Allford CP, Buckle PD (2017). Cardiff University. 10.17035/d.2017.0031380721. III-V Semiconductors
