Dr Qiang Li
Prosiectau fel Prif Ymchwiliwr
- C-band quantum-dot lasers on monolithically grown Si platform
(01.04.2022 - 31.03.2025) - Displacement Talbot Lithography: Accelerating a versatile and low-cost patterning technique for precision manufacturing (01.10.2021 - 30.09.2024)
- Epitaxy development of Sb-based type-II superlattices and its integration on silicon (31.03.2022 - 31.12.2024)
- Tunnel epitaxy, building a buffer-less III-V-on-insulator (XOI) platform for on-chip light sources (03.02.2020 - 30.04.2023)
Prosiectau fel Cyd-Ymchwiliwr
- MOCVD Growth & Characterisation of Sb-containing III-V Compound Semiconductors (01.10.2021 - 30.09.2024)
- ATLAS – Advanced Manufacturing Techniques for Semiconductor LASers (01.01.2021 - 21.12.2022)
- CS Connected (01.11.2020 - 31.05.2025)
- Future Compound Semiconductor Manufacturing Hub (01.10.2016 - 30.09.2024)
Setiau Data Ymchwil
- Curved InGaAs nanowire array lasers grown directly on silicon-on-insulator: data - Ratiu B-P, Temu B, Messina C, et al. (2023). Cardiff University. 10.17035/d.2023.0279873657. Photonic Crystals Nanowires Semiconductor Lasers
- Data: Lateral tunnel epitaxy of GaAs in lithographically defined cavities on 220 nm silicon-on-insulator - Yan Zhao, Ratiu Bogdan-Petrin, Zhang Weiwei, et al. (2023). Cardiff University. 10.17035/d.2023.0287470374. Semiconductor Structure/Growth Vapour Phase Epitaxy
- Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD: data - Brown R, Ratiu B-P, Liang B, et al. (2022). Cardiff University. 10.17035/d.2022.0218959420. Infrared Detectors
- Research Data supporting "Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers" - Messina C, Li Q, Oh SS, et al. (2023). Cardiff University. 10.17035/d.2023.0246621627. Semiconductor Lasers III-V Semiconductors Optical Phenomena Optical Devices and Subsystems
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