Antimonides have many important applications, most notably in infrared detection. Currently, antimonides are mostly grown via MBE. This project focuses on the growth of antimonides via MOCVD in order to benefit from the commercial advantages of MOCVD over MBE. Antimonides are notoriously difficult to grow via MOCVD due to the volatility of antimony at the high grow temperatures of MOCVD. This project aims to overcome this by optimising the growth conditions, focusing on the growth of antimony containing Type-II superlattices such as InAs/InAsSb and InAs/GaSb.